NCE3095G_30V N MOSFET，新洁能代理商

The NCE3095G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

VDS =30V,ID =95A
High density cell design for ultra low Rdson
Very low on-resistance RDS(on)
150 °C operating temperature

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详细内容

Description

The NCE3095G uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge.It can be used in a wide variety of applications.

Application

●DC/DC Converter

●Ideal for high-frequency switching and synchronous rectification

General Features

●VDS=30V,ID=95A

RDS(ON)=3.5mΩ(typical) VGS=10V

RDS(ON)=5.3mΩ(typical) VGS=4.5V

●High density cell design for ultra low Rdson

●Very low on-resistance RDS(on)

●Good stability and uniformity with high EAS

●150°C operating temperature

●Pb-free lead plating